MOSFET and IGBT Technology Due to the absence of minority carrier transport, MOSFETs can be switched at much higher frequencies. The limit on this is imposed by two factors: transit time of electrons across the drift region and the time required to charge and discharge the input Gate and “Miller” capacitances. IGBT derives its advantages from MOSFET and BJT topologies. It operates as a MOSFET with an injecting region on its Drain side to provide for conductivity modulation of the Drain drift region so that on-state losses are reduced, especially when compared to an equally rated high voltage MOSFET. As far as driving the IGBT is concerned, it resembles a MOSFET and hence all turn-on and turn-off phenomena comments, diagrams, and Driver circuits designed for driving MOSFET apply equally well to an IGBT.
Posted on: Tue, 17 Sep 2013 12:54:45 +0000
Trending Topics
Recently Viewed Topics
© 2015